vishay siliconix si7652dp document number: 73485 s09-0223-rev. b, 09-feb-09 www.vishay.com 1 n-channel reduced q g , fast switching mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfets ? high-efficient pwm optimized ? 100 % r g and uis tested product summary v ds (v) r ds(on) ( )i d (a) 30 0.0185 at v gs = 10 v 15 0.030 at v gs = 4.5 v 12 ordering information: SI7652DP-T1-E3 (lead (p b )-free) si7652dp-t1-ge3 (lead (p b )-free and halogen-free) 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom v ie w d g s n -channel mosfet notes: a. surface mounted on 1" x 1" fr4 board, t 10 s. b. maximum under steady state condition is 75 c/w. c. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulatio n process in manufacturing. a solder fill et at the exposed copper tip cannot be guara nteed and is not required to ensure adequate botto m side solder interconnection. d. rework conditions: manual soldering with a solder ing iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted a parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 25 continuous drain current (t j = 150 c) a t c = 25 c i d 15 a t c = 70 c 12 pulsed drain current i dm 40 continuous source current (diode conduction) a i s 3.2 single-pulse avalanche current l = 0.1 mh i as 15 avalanche energy e as 11.25 mj maximum power dissipation a t a = 25 c p d 3.9 w t a = 70 c 2.5 operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c, d 260 thermal resistance ratings a parameter typical maximum unit maximum junction-to-ambient a, b r thja 24 32 c/w maximum junction-to-case (drain) r thjc 79
www.vishay.com 2 document number: 73485 s09-0223-rev. b, 09-feb-09 vishay siliconix si7652dp notes: a. surface mounted on 1" x 1" fr4 board, t 10 s pulse test; pulse width 300 s, duty cycle 2 %. b. surface mounted on 1" x 1" fr4 board, t 10 s guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 1.8 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 5 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 9 a 0.0155 0.0158 v gs = 4.5 v, i d = 7 a 0.023 0.030 forward transconductance a g fs v ds = 15 v, i d = 9 a 16 s diode forward voltage a v sd i s = 2.3 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g v ds = 15 v, v gs = 5.0 v, i d = 9 a 8.7 13 nc gate-source charge q gs 1.5 gate-drain charge q gd 3.5 gate resistance r g 0.5 1.4 2.2 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 715 ns rise time t r 12 20 turn-off delay time t d(off) 32 50 fall time t f 14 25 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/s 30 60
document number: 73485 s09-0223-rev. b, 09-feb-09 www.vishay.com 3 vishay siliconix si7652dp typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 35 40 012345 v gs = 10 v thr u 5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 3 v 4 v - on-resistance ( ) r ds(on) 0.000 0.00 8 0.016 0.024 0.032 0.040 0 5 10 15 20 25 30 i d - drain c u rrent (a) v gs = 10 v v gs = 4.5 v 0 1 2 3 4 5 6 0246 8 10 v ds = 15 v i d = 9 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t c = - 55 c 125 c 25 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 200 400 600 8 00 1000 1200 04 8 12 16 20 v ds - drain-to-so u rce v oltage ( v ) c rss c - capacitance (pf) c oss c iss 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 9 a t j - j u nction temperat u re (c) r ds(on) - on-resistance ( n ormalized)
www.vishay.com 4 document number: 73485 s09-0223-rev. b, 09-feb-09 vishay siliconix si7652dp typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c 50 1 v sd ) v ( e g a t l o v n i a r d - o t - e c r u o s - - so u rce c u rrent (a) i s 10 t j = 25 c - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246 8 10 i d = 9 a - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 120 200 40 8 0 po w er ( w ) time (s) 160 110 0.1 0.01 0.001 safe operating area, junction-to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 100 ms - drain c u rrent (a) i d 0.1 t c = 25 c single p u lse 1 s 10 s dc 10 ms 1 ms limited b y r ds(on) *
document number: 73485 s09-0223-rev. b, 09-feb-09 www.vishay.com 5 vishay siliconix si7652dp typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73485 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 75 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-care 10 -3 10 -2 0 1 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance single p u lse
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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